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NTB6411AN, NTP6411AN, NVB6411AN
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Temper-
ature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
100
113
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 100 V
T J = 25 ° C
T J = 125 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
$ 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(th)
V GS(th) /T J
V GS = V DS , I D = 250 m A
2.0
8.6
4.0
V
mV/ ° C
Drain ? to ? Source On ? Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 72 A
V DS = 5 V, I D = 10 A
12.7
24
14
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C iss
3700
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 25 V, V GS = 0 V,
f = 1 MHz
550
200
Total Gate Charge
Threshold Gate Charge
Q G(TOT)
Q G(TH)
100
4.0
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = 10 V, V DS = 80 V,
I D = 72 A
16
47
Plateau Voltage
Gate Resistance
V GP
R G
5.2
3.1
V
W
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
t d(on)
16
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 80 V,
I D = 72 A, R G = 6.2 W
144
107
157
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
I S = 72 A
T J = 25 ° C
0.92
1.3
V
T J = 125 ° C
0.86
Reverse Recovery Time
t rr
94
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, I S = 72 A,
dI S /dt = 100 A/ m s
64
30
Reverse Recovery Charge
Q RR
330
nC
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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